This paper proposes an analytical method of the surge voltage peak by considering dynamic junction capacitance of SiC-schottky barrier diode(SBD) . This method is useful for estimating maximum peak of surge voltage of SiC-SBD, and by using this method, the influence of the switching speed (dv/dt) and inductance in circuit on the surge voltage peak is clarified. The analytical results show that maximum of surge voltage peak is independent from the inductance in circuit for ultra high dv/dt condition, and the dominant parameter to decrease surge voltage peak is dv/dt of supplied voltage to circuit.